| Part Number | BCV61A Datasheet |
|---|---|
| Manufacturer | Galaxy Microelectronics |
| Overview |
NPN General-purpose Double Transistor BCV61
Features
Low current Low voltage Matched pairs RoHS compliant with Halogen-free
Applications
Applications With Working Point Independent of Tempe.
* Low current * Low voltage * Matched pairs * RoHS compliant with Halogen-free Applications * Applications With Working Point Independent of Temperature * Current Mirrors Mechanical Data * Case: SOT-143 * Molding compound: UL flammability classification rating 94V-0 * Terminals: Tin-plated; solderab. |
BCV61A Datasheet and Specifications PDF
The BCV61A is a NPN General-purpose Double Transistor.
Key Specifications
| Package | TO-253-4 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -65 °C |
| Part Number | BCV61A Datasheet |
|---|---|
| Description | NPN Silicon Double Transistor |
| Manufacturer | Infineon |
| Overview | BCV61 NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and VBE matching High current gain Low collector-emitter saturation voltage C1 (2) C2 (1) 3 4 2 1 Tr.1. V61 Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. DC Characteristics of T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff. |
| Part Number | BCV61A Datasheet |
|---|---|
| Description | NPN general purpose double transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
NPN general-purpose double transistors in a small SOT143B Surface-Mounted Device (SMD) plastic package.
Table 1. Product overview Type number
BCV61 BCV61A BCV61B BCV61C
Package NXP SOT143B
JEITA -
.
* Low current (max. 100 mA) * Low voltage (max. 30 V) * Matched pairs 1.3 Applications * Applications with working point independent of temperature * Current mirrors 2. Pinning information Table 2. Pin 1 2 3 4 Pinning Description collector TR2; base TR1 and TR2 collector TR1 emitter TR1 emitter . |
| Part Number | BCV61A Datasheet |
|---|---|
| Description | NPN Silicon Double Transistors |
| Manufacturer | Siemens Semiconductor Group |
| Overview | NPN Silicon Double Transistors Preliminary Data To be used as a current mirror q Good thermal coupling and VBE matching q High current gain q Low emitter-saturation voltage q BCV 61 Type BCV 61 A BC. tor Group 1 5.91 BCV 61 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics for transistor T1 Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = . |