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BD142 Datasheet

The BD142 is a NPN Silicon Transistor. Download the datasheet PDF and view key features and specifications below.

Part NumberBD142
ManufacturerComset Semiconductors
Overview BD142 NPN SILICON TRANSISTOR POWER LINERAR AND SWITCHING APPLICATIONS LF Large Signal Power Amplification Low Saturation Voltage High Dissipation Rating Intended for a wide variety of intermediate-pow. Collector-Emitter Saturation Voltage (*) Collector-Emitter Cutoff Current Emitter-Base Cutoff Current Base-Emitter Voltage (*) Second Breakdown collector current Static Forward Current Transfer Ratio (*) Test Condition(s) IC=200 mA, IB=0 IC=100 mA, VBE=-1.5 V IC=4 A, IB=0.4 A VCE= 40 V, VBE=-1.5 V.
Part NumberBD142
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-3 package ·Low collector saturation voltage ·High dissipation rating APPLICATIONS ·LF large signal power amplification ·Intended for a wide variety of intermediate power applications. ·Suited. Power Transistors BD142 CHARACTERISTICS www.datasheet4u.com Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitte.
Part NumberBD142
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Low Collector Saturation Voltage ·High Power Dissipation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·LF large signal power amplification. ·Intend. SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC=10mA; IB=0 V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 4A; VCE= 4V ICBO Collector Cutoff Current .