| Part Number | BDV67D Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector Current -IC= 16A ·Collector-Emitter Saturation Voltage- : VCE(sat)= 2.0V(Max.)@ IC= 10A ·Complement to Type BDV66D ·Minimum Lot-to-Lot variations for robust device performance and reliable . er Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 40mA VBE(on) Base-Emitter On Voltage ICEO Collector Cutoff Current. |
BDV67D Datasheet and Specifications PDF
The BDV67D is a NPN Transistor.
| Part Number | BDV67D Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-3PN package ·Complement to type BDV66/66A/66B/66C/66D ·DARLINGTON ·High DC current gain APPLICATIONS ·For use in audio output stages and general amplifier and switching ap. PN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER BDV67 BDV67A V(BR)CEO Collector-emitter breakdown voltage BDV67B BDV67C BDV67D VCEsat VBE ICBO ICEO IEBO hFE-1 hFE-2 hFE-3 CC VF ton toff Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off cur. |
| Part Number | BDV67D Datasheet |
|---|---|
| Description | NPN SILICON DARLINGTONS POWER TRANSISTORS |
| Manufacturer | Comset Semiconductors |
| Overview | BDV67-A-B-C-D NPN SILICON DARLINGTONS POWER TRANSISTORS They are silicon epitaxial base transistors mounted in TO-3PN. Theyare designed for audio output stages and general amplifier and switching appl. et/ Value Unit PT Power Dissipation @ Tmb = 25° C 200 W TJ Junction Temperature 150 °C -65 to +150 TS Storage Temperature THERMAL CHARACTERISTICS Symbol RthJ-mb Ratings Thermal Resistance, Junction to Mounting Base Value 0.625 Unit °C / W SWITCHING TIMES Symbol ton toff Ratings tur. |