The BFR181T is a Silicon NPN Planar RF Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | BFR181T Datasheet |
|---|---|
| Manufacturer | Vishay |
| Overview | BFR181T/BFR181TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at. D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR181T Marking: RF Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR181TW Marking: WRF Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherw. |
| Part Number | BFR181T Datasheet |
|---|---|
| Description | NPN Silicon RF Transistor |
| Manufacturer | Infineon |
| Overview | BFR181T NPN Silicon RF Transistor Preliminary data For low noise, high-gain broadband amplifiers at 3 collector currents from 0.5 mA to 12 mA fT = 8 GHz F = 1.45 dB at 900 MHz 2 1 VPS05996 ES. 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| ComSIT Distribution GmbH | 15000 | - | View Offer |
| Part Number | Manufacturer | Description |
|---|---|---|
| BFR181 | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR181TW | Vishay | Silicon NPN Planar RF Transistor |
| BFR181W | Infineon | Low Noise Silicon Bipolar RF Transistor |
| BFR181 | Siemens Semiconductor Group | NPN Silicon RF Transistor |
| BFR181W | Siemens Semiconductor Group | NPN Silicon RF Transistor |