BFT93 Datasheet
BFT93 Datasheet (NXP Semiconductors)
NXP Semiconductors
PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband amplifiers, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analyzers, etc. The transis.
low intermodulation distortion and high power gain; due to its very high transition frequency, it also has excellent wideband properties and low noise up to high frequencies. NPN complements are BFR93 and BFR93A. PINNING PIN DESCRIPTION Code: X1p 1 base 2 emitter 3 collector lfpage 3 1 Top.
BFT93 Datasheet (Siemens Semiconductor Group)
Siemens Semiconductor Group
BFT 93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESD: Electrostatic discharge sensitive device, observe handling precau.
nit V(BR)CEO 12 60 - V nA 50 µA 10 20 - IC = 1 mA, IB = 0 Collector-base cutoff current ICBO IEBO hFE VCB = 5 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFT 93 Electrical Characteristics at TA = 25°C, un.