BFT93
BFT93 is PNP Silicon RF Transistor manufactured by Siemens Semiconductor Group.
BFT 93
PNP Silicon RF Transistor
- For low distortion broadband amplifiers up to 1 GHz at collector currents from 2m A up to 20m A
ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFT 93 X1s Q62702-F1063 1=B 2=E 3=C
Package SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 15 2 35 3 m W 300 150
- 65 ... + 150
- 65 ... + 150 ≤ 305 °C m A Unit V
VCEO VCBO VEBO IC IB Ptot Tj TA Tstg
1)
TS ≤ 58 °C
Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction
- soldering point
Rth JS
K/W
1) TS is measured on the collector lead at the soldering point to the pcb.
Semiconductor Group
Dec-12-1996
BFT 93
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit
V(BR)CEO
12 60
- V n A 50 µA 10 20
- IC = 1 m A, IB = 0
Collector-base cutoff current
ICBO IEBO h FE
VCB = 5 V, IE = 0
Emitter-base cutoff current
VEB = 2 V, IC = 0
DC current...
