| Part Number | BS108 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
BS108
Small Signal MOSFET 250 mAmps, 200 Volts, Logic Level
N−Channel TO−92
This MOSFET is designed for high voltage, high speed switching applications such as line drivers, relay drivers, CMOS logic.
* Low Drive Requirement, VGS = 3.0 V max * Inherent Current Sharing Capability Permits Easy Paralleling of many Devices * AEC Qualified * PPAP Capable * This is a Pb *Free Device* MAXIMUM RATINGS Rating Symbol Value Unit Drain *Source Voltage VDSS 200 Vdc Gate *Source Voltage VGS ±20 Vdc . |
BS108 Datasheet and Specifications PDF
The BS108 is a Small Signal MOSFET.
Key Specifications
| Package | TO-92 |
|---|---|
| Mount Type | Through Hole |
| Pins | 3 |
| Max Operating Temp | 150 °C |
| Min Operating Temp | -55 °C |
| Part Number | BS108 Datasheet |
|---|---|
| Description | 200 VOLTS N-CHANNEL TMOS |
| Manufacturer | Motorola Semiconductor |
| Overview |
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by BS108/D
Logic Level TMOS
BS108
®
1 DRAIN
N–Channel Enhancement Mode
This TMOS FET is designed for high voltage, high speed switching a.
y Cycle 2.0%.
v
v
TMOS is a registered trademark of Motorola, Inc.
© Motorola, Inc. 1997
BS108
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain *Source Breakdown Voltage (VGS = 0, ID = 10 µA) Zero Gate Voltage Drain C. |
| Part Number | BS108 Datasheet |
|---|---|
| Description | N-channel enhancement mode vertical D-MOS transistor |
| Manufacturer | NXP Semiconductors |
| Overview |
N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transforme.
* Direct interface to C-MOS, TTL, etc. * High-speed switching * No secondary breakdown. DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in a TO-92 envelope, intended for use as a line current interruptor in telephone sets and for applications in relay, high-speed and line transforme. |
| Part Number | BS108 Datasheet |
|---|---|
| Description | DMOS Transistors |
| Manufacturer | General Semiconductor |
| Overview |
BS108
DMOS Transistors (N-Channel)
TO-92
.181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6)
FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦
High breakdown voltage High input impedance Low gate threshold voltage Low drai.
* * * * * * * * * * High breakdown voltage High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown Specially suited for telephone subsets max. ∅ .022 (0. |