BU508AW Datasheet and Specifications PDF

The BU508AW is a High voltage NPN Power transistor.

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Part NumberBU508AW Datasheet
ManufacturerSTMicroelectronics
Overview The BU508AW is manufactured using Diffused Collector in Planar Technology adopting new and enhanced high voltage structure for updated performance to the Horizontal Deflection stage. Order codes Part.
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* State-of-the-art technology:
* Diffused collector “Enhanced generation” Stable performances versus operating temperature variation Low base-drive requirement Tight hFE range at operating collector current High ruggedness TO-247 semi-insulated power package In compliance with the 2002/.
Part NumberBU508AW Datasheet
DescriptionSilicon Diffused Power Transistor
ManufacturerNXP Semiconductors
Overview High voltage, high-speed switching npn transistors in a plastic envelope, primarily for use in horizontal deflection circuits of colour television receivers. QUICK REFERENCE DATA SYMBOL VCESM VCEO IC. ollector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Total power dissipation Storage temperature Junction temperature CONDITIONS VBE = 0 V MIN. -65 MAX. 1500 700 8 15 4 6 125 150 150 UN.
Part NumberBU508AW Datasheet
DescriptionNPN Transistor
ManufacturerInchange Semiconductor
Overview ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 700V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use. nductor BU508AW ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 4.5A; IB= 1.6A 1.0 V VBE(sat) Base-Emitter Sa.
Part NumberBU508AW Datasheet
DescriptionSILICON POWER TRANSISTOR
ManufacturerSavantIC
Overview ·With TO-247 package ·High voltage ·High speed switching APPLICATIONS ·For use in horizontal deflection circuits of colour TV receivers. PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outli. 00mA ;IB=0,L=25mH 700 V VCEsat Collector-emitter saturation voltage IC=4.5A ;IB=1.6A 1.0 V VBEsat Base-emitter saturation voltage IC=4.5A ;IB=2A VCE=RatedVCE; VBE=0 TC=125 VEB=6.0V; IC=0 1.1 1.0 2.0 10 V ICES Collector cut-off current mA IEBO Emitter cut-off current mA hFE DC cur.