| Part Number | BUV26A Datasheet |
|---|---|
| Manufacturer | Comset Semiconductors |
| Overview |
SEMICONDUCTORS
BUV26 – BUV26A
SILICON POWER TRANSISTORS
High-speed,NPN power transistors in a TO-220 envelope. They are intended for fast switching applications such as high frequency and efficiency.
TORS
BUV26 * BUV26A ELECTRICAL CHARACTERISTICS TC=25°C unless otherwise noted Value Symbol ICEX IEBO VCE0sust Ratings Collector Cutoff Current (*) Emitter Cutoff Current Collector-Emitter Sustaining Voltage Collector-Emitter saturation Voltage Test Condition(s) Min BUV26 VCE =VCESMax VBE= 1.5V, . |
BUV26A Datasheet and Specifications PDF
The BUV26A is a SILICON POWER TRANSISTOR.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | BUV26A Datasheet |
|---|---|
| Description | SILICON POWER TRANSISTOR |
| Manufacturer | SavantIC |
| Overview | ·With TO-220C package ·Low collector saturation voltage ·Fast switching speed APPLICATIONS ·For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN 1 2 3. er Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER CONDITIONS MIN BUV26A SYMBOL TYP. MAX UNIT VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICEX IEBO Collector-emitter sustaining voltage IC=0.2 A ;IB=0;L=25mH IC=5A ;IB=0.5 A IC=10A; IB=1A IC=5A ;IB=. |