| Part Number | CGH40025 |
|---|---|
| Manufacturer | Cree |
| Overview |
RES,1/16W,0603,1%,47 OHMS RES,1/16W,0603,1%,100 OHMS CAP, 470PF, 5%,100V, 0603 CAP, 33 UF, 20%, G CASE CAP, 1.0UF, 100V, 10%, X7R, 1210 CAP 10UF 16V TANTALUM CAP, 100.0pF, +/-5%, 0603 CAP, 0.8pF, +/-0.
* Up to 6 GHz Operation * 15 dB Small Signal Gain at 2.0 GHz * 13 dB Small Signal Gain at 4.0 GHz * 30 W typical PSAT * 62 % Efficiency at PSAT * 28 V Operation APPLICATIONS * 2-Way Private Radio * Broadband Amplifiers * Cellular Infrastructure * Test Instrumentation * Class A, AB, Linea. |
CGH40025 Datasheet
The CGH40025 is a RF Power GaN HEMT.
| Part Number | CGH40025 |
|---|---|
| Description | RF Power GaN HEMT |
| Manufacturer | MACOM Technology Solutions |
| Overview |
The CGH40025 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40025, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of .
* Up to 6 GHz Operation * 15 dB Small Signal Gain at 2.0 GHz * 13 dB Small Signal Gain at 4.0 GHz * 30 W typical PSAT * 62% Efficiency at PSAT * 28 V Operation Applications * 2-Way Private Radio * Broadband Amplifiers * Cellular Infrastructure * Test Instrumentation * Class A, AB, Amplifiers suitab. |