| Part Number | E3M0075120D Datasheet |
|---|---|
| Manufacturer | Wolfspeed |
| Overview |
E3M0075120D
Silicon Carbide Power MOSFET E-Series Automotive N-Channel Enhancement Mode
Features
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• H.
* 3rd generation SiC MOSFET technology * High blocking voltage with low on-resistance * High-speed switching with low capacitances * * Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant * Automotive Qualified (AEC-Q101) and PPAP Capable Benefits * Higher system. |
E3M0075120D Datasheet and Specifications PDF
The E3M0075120D is a Silicon Carbide Power MOSFET.
Key Specifications
| Package | TO-247-3 |
|---|---|
| Height | 25.5 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | E3M0075120D Datasheet |
|---|---|
| Description | Silicon Carbide Power MOSFET |
| Manufacturer | Cree |
| Overview |
E3M0075120D
Silicon Carbide Power MOSFET
E-Series Automotive
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology • High blocking voltage with low On-resis.
Package
* 3rd generation SiC MOSFET technology * High blocking voltage with low On-resistance * High speed switching with low capacitances * Fast intrinsic diode with low reverse recovery (Qrr) * Halogen free, RoHS compliant * Automotive Qualified (AEC-Q101) and PPAP Capable Benefits * Higher sy. |