FCH041N60F Datasheet and Specifications PDF

The FCH041N60F is a N-Channel MOSFET.

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Part NumberFCH041N60F Datasheet
Manufactureronsemi
Overview SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance..
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 36 mW
* Ultra Low Gate Charge (Typ. Qg = 277 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
* 100% Avalanche Tested
* This Device is Pb
*Free, Halide Free, and is RoHS Compliant Applications
* Telecom / Server Power Supplies
* Industrial Power .
Part NumberFCH041N60F Datasheet
DescriptionN-Channel MOSFET
ManufacturerFairchild Semiconductor
Overview SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate c.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 36 mΩ
* Ultra Low Gate Charge (Typ. Qg = 277 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)
* 100% Avalanche Tested
* RoHS Compliant Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFE.
Part NumberFCH041N60F Datasheet
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor ·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Easy to drive ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance an.
*With TO-247 packaging
*With low gate drive requirements
*Easy to drive
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source V.