FDMC7200S Datasheet and Specifications PDF

This device includes two specialized N−Channel MOSFETs in a dual Power 33 (3 mm x 3 mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous b.

* Q1: N
*Channel
* Max RDS(on) = 22 mW at VGS = 10 V, ID = 6 A
* Max RDS(on) = 34 mW at VGS = 4.5 V, ID = 5 A
* Q2: N
*Channel
* Max RDS(on) = 10 mW at VGS = 10 V, ID = 8.5 A
* Max RDS(on) = 13.5 mW at VGS = 4.5 V, ID = 7.2 A
* This Device is Pb
*Free, Halide Free and is RoHS Compliant Applications
* M.

This device includes two specialized N-Channel MOSFETs in a dual power33 (3mm X 3mm MLP) package. The switch node has been internally connected to enable easy placement and routing of synchronous buck.

Q1: N-Channel
* Max rDS(on) = 22 mΩ at VGS = 10 V, ID = 6 A
* Max rDS(on) = 34 mΩ at VGS = 4.5 V, ID = 5 A Q2: N-Channel
* Max rDS(on) = 10 mΩ at VGS = 10 V, ID = 8.5 A
* Max rDS(on) = 13.5 mΩ at VGS = 4.5 V, ID = 7.2 A
* RoHS Compliant General Description This device includes two specialized N-Cha.