| Part Number | FDMC86160 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This N−Channel MOSFET is produced using onsemi’s advanced
PowerTrench process that incorporates Shielded Gate technology. This process has been optimized for the on−state resistance. This device is we.
* Shielded Gate MOSFET Technology * Max rDS(on) = 14 mW at VGS = 10 V, ID = 9 A * Max rDS(on) = 23 mW at VGS = 6 V, ID = 7 A * High Performance Technology for Extremely Low rDS(on) * This Device is Lead *Free and RoHS Compliant ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Param. |
FDMC86160 Datasheet PDF
The FDMC86160 is a N-Channel MOSFET.
| Part Number | FDMC86160 Datasheet |
|---|---|
| Description | N-Channel Power Trench MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for ap.
* Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A * Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A * High performance technology for extremely low rDS(on) * Termination is Lead-free and RoHS Compliant General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench. |