FDMS7672AS Datasheet and Specifications PDF

FDMS7672AS-VB FDMS7672AS-VB Datasheet N-Channel 30 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 30 0.003 at VGS = 10 V 0.005 at VGS = 4.5 V ID (A)a, e 120 90 Qg (Typ.) 71.

* TrenchFET® Power MOSFET
* 100 % Rg and UIS Tested APPLICATIONS
* Notebook PC Core
* VRM/POL Top View DFN5X6 Bottom View PIN1 Top View 1 8 2 7 3 6 4 5 D G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Ga.

„ Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A „ Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body D.

General Description
* Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
* Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A
* Advanced Package and Silicon combination for low rDS(on) and high efficiency
* SyncFET Schottky Body Diode
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant The FDMS7.