Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
Features
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A.
- Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A.
- Advanced Package and Silicon design for low rDS(on) and high
efficiency.
- Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter.
FDMS7672 Datasheet
