FDMS7672 Overview
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
FDMS7672 Key Features
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A
- Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A
- Advanced Package and Silicon design for low rDS(on) and high
- Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with mi
