FDMS7678 Datasheet | Fairchild Semiconductor

FDMS7678 N-Channel Power Trench® MOSFET March 2015 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ Features General Description - Max r DS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A - Max r DS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A - High Performance Technology for Extremely Low r DS(on) - Termination is Lead-Free - Ro HS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. Applications - DC - DC Buck Converters - Notebook Battery Power Management - Load Switch in Notebook Top Pin 1 Bottom Pin 1 Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source...