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FDMS7678 - MOSFET

General Description

Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A High Performance Technology for Extremely Low rDS(on) Termination is Lead-Free RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semicondu

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS7678 N-Channel Power Trench® MOSFET March 2015 FDMS7678 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ Features General Description „ Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A „ High Performance Technology for Extremely Low rDS(on) „ Termination is Lead-Free „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.