FDMS7678 Description
Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A High Performance Technology for Extremely Low rDS(on) Termination is Lead-Free RoHS pliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and...
FDMS7678 Key Features
- Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A
- Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A
- High Performance Technology for Extremely Low rDS(on)
- Termination is Lead-Free
- RoHS pliant