FDMS7670AS Description
at VGS = 10 V, ID = 21 A Max rDS(on) = 3.2 m: at VGS = 7 V, ID = 19 A Advanced Package and Silicon bination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest rDS(on) while...
FDMS7670AS Key Features
- Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A
- Max rDS(on) = 3.2 m: at VGS = 7 V, ID = 19 A
- Advanced Package and Silicon bination for low rDS(on)
- SyncFET Schottky Body Diode
- MSL1 robust package design
- 100% UIL tested