FDMS7670AS Datasheet | Fairchild Semiconductor

FDMS7670AS N-Channel Power Trench® Sync FETTM October 2014 N-Channel Power Trench® Sync FETTM 30 V, 42 A, 3 m: Features General Description - Max r DS(on) = 3.0 m: at VGS = 10 V, ID = 21 A - Max r DS(on) = 3.2 m: at VGS = 7 V, ID = 19 A - Advanced Package and Silicon bination for low r DS(on) and high efficiency - Sync FET Schottky Body Diode - MSL1 robust package design - 100% UIL tested The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Ro HS pliant - Notebook Vcore/ GPU low side switch - Networking Point of Load low side switch - Tele secondary side rectification Top Bottom Pin 1 D5 D6 Power 56 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TC = 25 °C unless otherwise noted Symbol VDS VGS ID dv/dt EAS PD TJ,...