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FDMS7670AS - N-Channel MOSFET

Description

Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A Max rDS(on) = 3.2 m: at VGS = 7 V, ID = 19 A Advanced Package and Silicon combination for low rDS(on) and high efficiency SyncFET Schottky Body Diode MSL1 robust package design 100% UIL tested

Features

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Datasheet Details

Part number FDMS7670AS
Manufacturer Fairchild Semiconductor
File Size 292.72 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMS7670AS Datasheet
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FDMS7670AS N-Channel PowerTrench® SyncFETTM October 2014 FDMS7670AS N-Channel PowerTrench® SyncFETTM 30 V, 42 A, 3 m: Features General Description „ Max rDS(on) = 3.0 m: at VGS = 10 V, ID = 21 A „ Max rDS(on) = 3.2 m: at VGS = 7 V, ID = 19 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ SyncFET Schottky Body Diode „ MSL1 robust package design „ 100% UIL tested The FDMS7670AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
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