FDMS7676 Description
at VGS = 10 V, ID = 19 A Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A Advanced Package and Silicon design for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications MSL1 robust package design 100% UIL tested RoHS pliant This N-Channel MOSFET has been designed...
FDMS7676 Key Features
- Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A
- Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A
- Advanced Package and Silicon design for low rDS(on) and high
- Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with mi