FDMS7676 Datasheet | Fairchild Semiconductor

FDMS7676 N-Channel Power Trench® MOSFET October 2014 N-Channel Power Trench® MOSFET 30 V, 5.5 m: Features General Description - Max r DS(on) = 5.5 m: at VGS = 10 V, ID = 19 A - Max r DS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A - Advanced Package and Silicon design for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications - MSL1 robust package design - 100% UIL tested - Ro HS pliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - IMVP Vcore Switching for Notebook - VRM Vcore Switching for Desktop and Server - Oring FET / Load Switch - DC-DC Conversion Top Bottom Pin 1 Power 56 D5 D6 D7 D8 4G 3S 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ, TSTG Parameter Drain to Source...