FDMS7670 Datasheet | Fairchild Semiconductor

FDMS7670 N-Channel Power Trench® MOSFET N-Channel Power Trench® MOSFET 30 V, 3.8 mΩ Features - Max r DS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A - Max r DS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A - Advanced Package and Silicon design for low r DS(on) and high efficiency - Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications - MSL1 robust package design - 100% UIL tested - Ro HS pliant October 2014 General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low r DS(on), fast switching speed and body diode reverse recovery performance. Applications - IMVP Vcore Switching for Notebook - VRM Vcore Switching for Desktop and Server - Oring FET / Load Switch - DC-DC Conversion Top Bottom Pin 1 S D5 D6 4G 3S Power 56 D7 D8 2S 1S MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS EAS PD TJ,...