| Part Number | FDN304P Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview |
This P−Channel 1.8 V specified MOSFET uses onsemi’s advanced
low voltage POWERTRENCH process. It has been optimized for battery power management applications.
Features
• −2.4 A, −20 V
♦ RDS(ON) = 52 m.
* *2.4 A, *20 V * RDS(ON) = 52 mW @ VGS = *4.5 V * RDS(ON) = 70 mW @ VGS = *2.5 V * RDS(ON) = 100 mW @ VGS = *1.8 V * Fast Switching Speed * High Performance Trench Technology for Extremely Low RDS(ON) * SUPERSOTt *23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the sam. |
FDN304P Datasheet PDF
The FDN304P is a P-Channel MOSFET.
| Part Number | FDN304P Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Fairchild Semiconductor |
| Overview |
This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications.
Applications
• Battery management • Loa.
* *2.4 A, *20 V. RDS(ON) = 52 mΩ @ VGS = *4.5 V RDS(ON) = 70 mΩ @ VGS = *2.5 V RDS(ON) = 100 mΩ @ VGS = *1.8 V * Fast switching speed * High performance trench technology for extremely low RDS(ON) * SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the sam. |
| Part Number | FDN304P Datasheet |
|---|---|
| Description | P-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
P-Channel MOSFET FDN304P (KDN304P)
MOSFET
■ Features
● VDS (V) =-20V ● ID =-2.4A (VGS =-4.5V) ● RDS(ON) ＜ 52mΩ (VGS =-4.5V) ● RDS(ON) ＜ 70mΩ (VGS =-2.5V) ● RDS(ON) ＜ 100mΩ (VGS =-1.8V)
D
.
* VDS (V) =-20V * ID =-2.4A (VGS =-4.5V) * RDS(ON) ＜ 52mΩ (VGS =-4.5V) * RDS(ON) ＜ 70mΩ (VGS =-2.5V) * RDS(ON) ＜ 100mΩ (VGS =-1.8V) D +0.22.8 -0.1 SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 +0.21.6 -0.1 0.55 0.4 Unit: mm 0.15 +0.02 -0.02 1.Gate 2.Source . |