FDN304P
Overview
This P-Channel 1.8 V specified MOSFET uses onsemi’s advanced low voltage POWERTRENCH process. It has been optimized for battery power management applications.
- -2.4 A, -20 V
- RDS(ON) = 52 mW @ VGS = -4.5 V
- RDS(ON) = 70 mW @ VGS = -2.5 V
- RDS(ON) = 100 mW @ VGS = -1.8 V
- Fast Switching Speed
- High Performance Trench Technology for Extremely Low RDS(ON)
- SUPERSOTt-23 provides Low RDS(ON) and 30% Higher Power Handling Capability than SOT23 in the same Footprint
- These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant
