FQA13N80 Datasheet and Specifications PDF

The FQA13N80 is a 800V N-Channel MOSFET.

Key Specifications

Max Operating Temp150 °C
Part NumberFQA13N80 Datasheet
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* 12.6A, 800V, RDS(on) = 0.75Ω @VGS = 10 V
* Low gate charge ( typical 68 nC)
* Low Crss ( typical 30pF)
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability September 2006 QFET ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchil.
Part NumberFQA13N80_F109 Datasheet
DescriptionMOSFET
ManufacturerFairchild Semiconductor
Overview This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
* Low Gate Charge (Typ. 68 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D G DS TO-3PN G S Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Volt.
Part NumberFQA13N80-F109 Datasheet
DescriptionN-Channel MOSFET
Manufactureronsemi
Overview This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 12.6 A, 800 V, RDS(on) = 750 mΩ (Max.) @ VGS = 10 V, ID = 6.3 A
* Low Gate Charge (Typ. 68 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested D G G D S TO-3PN Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Volta.

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