| Part Number | FQD1N60 Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
* * * * * * 1.0A, 600V, RDS(on) = 11.5Ω @VGS = 10 V Low gate charge ( typical 5.0 nC) Low Crss ( typical 3.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G S D-PAK FQD Series I-PAK G D S FQU Series G! ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM . |
FQD1N60 Datasheet and Specifications PDF
The FQD1N60 is a 600V N-Channel MOSFET.
| Part Number | FQD1N60 Datasheet |
|---|---|
| Description | 1.3A N-Channel MOSFET |
| Manufacturer | OuCan |
| Overview | Product Summary The FQD1N60 & FQU1N60 & FQI1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC. TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TJ, TSTG TL G S DG FQU1N60 Maximum 600 ±30 1.3 0.8 4 1 15 30 5 45 0.36 -50 to 150 300 Thermal Characteristics Parameter Maximum J. |