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FQP13N10 Datasheet

The FQP13N10 is a 100V N-Channel MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberFQP13N10
ManufacturerFairchild Semiconductor
Overview These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to min.
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* 12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symb.
Part NumberFQP13N10
DescriptionN-Channel MOSFET
ManufacturerInchange Semiconductor
Overview isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQP13N10 ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) ≤180mΩ@VGS = 10V ·Fast Switching ·100%.
*Drain Source Voltage- : VDSS= 100V(Min)
*Static Drain-Source On-Resistance : RDS(on) ≤180mΩ@VGS = 10V
*Fast Switching
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATIONS
*Switching applications
*ABSOLUTE MAXIMUM RATINGS(Ta=25℃) .

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