| Part Number | FQP50N06L Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to .
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IA. |
FQP50N06L Datasheet PDF
The FQP50N06L is a 60V LOGIC N-Channel MOSFET.
| Part Number | FQP50N06L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
·Drain Current ID=50A@ TC=25℃ ·Drain Source Voltage-
: VDSS=60V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 22mΩ(Max) ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device
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isc N-Channel Mosfet Transistor
*ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 0.25mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 0.25mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 25A IGSS Gate Source Le. |
| Part Number | FQP50N06L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | onsemi |
| Overview |
This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce .
* 52.4 A, 60 V, RDS(on) = 21 mΩ (Max.) @ VGS = 10 V, ID = 26.2 A * Low Gate Charge (Typ. 24.5 nC) * Low Crss (Typ. 90 pF) * 100% Avalanche Tested * 175°C Maximum Junction Temperature Rating D GDS TO-220 G Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IA. |