| Part Number | HGTG11N120CND Datasheet |
|---|---|
| Manufacturer | Intersil |
| Overview | HGTG11N120CND Data Sheet January 2000 File Number 4580.2 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl. |
HGTG11N120CND Datasheet and Specifications PDF
The HGTG11N120CND is a N-Channel IGBT.
| Part Number | HGTG11N120CND Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | Fairchild Semiconductor |
| Overview | HGTG11N120CND Data Sheet December 2001 43A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the. of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl. |
| Part Number | HGTG11N120CND Datasheet |
|---|---|
| Description | N-Channel IGBT |
| Manufacturer | onsemi |
| Overview |
Symbol
HGTG11N120CND
Units
Collector to Emitter Voltage
Collector Current Continuous At TC = 25°C At TC = 110°C
BVCES
1200
V
IC25
43
A
IC110
22
A
Collector Current Pulsed (Note 1) Gate t.
of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on *state conduction loss of a bipolar transistor. The IGBT used is the development type TA49291. The Diode used is the development type TA49189. The IGBT is ideal for many high voltage switching appl. |