HGTG20N60B3 Datasheet
HGTG20N60B3 Datasheet (Fairchild Semiconductor)
Fairchild Semiconductor
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS .
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications.
HGTG20N60B3 Datasheet (Intersil)
Intersil
HGT1S20N60B3S, HGTP20N60B3, HGTG20N60B3 Data Sheet January 2000 File Number 3723.6 40A, 600V, UFS Series N-Channel IGBTs The HGT1S20N60B3S, the HGTP20N60B3 and the HGTG20N60B3 are Generation III MOS .
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT is ideal for many high voltage switching applications.
HGTG20N60B3 Datasheet (onsemi)
onsemi
UFS Series N-Channel IGBTs 40 A, 600 V HGTG20N60B3 The HGTG20N60B3 is a Generation III MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors. These de.
of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on
*state conduction loss of a bipolar transistor. The much lower on
*state voltage drop varies only moderately between 25°C and 150°C.
The IGBT is ideal for many high voltage switching applications.