| Part Number | IRF1010NS Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-t.
*With TO-263( D2PAK ) packaging *High speed switching *Low gate input resistance *Standard level gate drive *Easy to use *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation INCHANGE Semiconductor IRF1010NS *APPLICATIONS *Power supply *Switchin. |
IRF1010NS Datasheet and Specifications PDF
The IRF1010NS is a N-Channel MOSFET.
| Part Number | IRF1010NS Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | l l HEXFET® Power MOSFET D IRF1010NS IRF1010NL VDSS = 55V RDS(on) = 11mΩ G S Advanced HEXFET ® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremel. surface mount application. The through-hole version (IRF1010NL) is available for lowprofile applications. ID = 85A D 2 P ak T O -26 2 IRF1010NS IRF1010NL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VG. |