| Part Number | IRF1404Z |
|---|---|
| Manufacturer | International Rectifier |
| Overview | S ID = 75A Absolute Maximum Ratings Parameter TO-220AB IRF1404Z D2Pak IRF1404ZS Max. 190 130 75 750 220 TO-262 IRF1404ZL Units A ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limi. l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G HEXFET® Power MOSFET D VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-re. |
IRF1404Z Datasheet
The IRF1404Z is a Power MOSFET.
| Part Number | IRF1404Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRF1404Z，IIRF1404Z
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤3.7mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested .
*Static drain-source on-resistance: RDS(on) ≤3.7mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |
| Part Number | IRF1404Z |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Kexin Semiconductor |
| Overview |
DIP Type
N-Channel MOSFET IRF1404Z (KRF1404Z)
■ Features
● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) ＜ 3.7mΩ (VGS = 10V) ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax
(1.70) 1.3.
* VDS (V) = 40V * ID = 75 A (VGS = 10V) * RDS(ON) ＜ 3.7mΩ (VGS = 10V) * Fast Switching * Repetitive Avalanche Allowed up to Tjmax (1.70) 1.30 ± 0.10 TO-220 9.90 ± 0.20 (8.70) ø3.60 ± 0.10 9.20 ± 0.20 (1.46) (45 ) 13.08 ± 0.20 (1.00) 1.27 ± 0.10 1.52 ± 0.10 123 2.54TYP [2.54 ± 0.20 ] 0.80 . |