IRF1404Z
Overview
- VDSS = 40V RDS(on) = 3.7mΩ This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications.
