| Part Number | IRF1407L Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switc. sipate up to 2.0W in a typical surface mount application. The through-hole version (IRF1407L) is available for lowprofile applications. ID = 100AV D2Pak IRF1407S TO-262 IRF1407L Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TA = 25°C PD @TC = 25°C VGS EAS IAR EAR dv/d. |
IRF1407L Datasheet and Specifications PDF
The IRF1407L is a Power MOSFET.
| Part Number | IRF1407L Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview | Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switchi. on. The through-hole version (IRF1407L) is available for low-profile applications. HEXFET® Power MOSFET VDSS RDS(on) ID 75V 0.0078 100A D D S G D2 Pak IRF1407SPbF S GD TO-262 Pak IRF1407LPbF G Gate D Drain S Source Base part number IRF1407LPbF IRF1407SPbF Package Type TO-262 D2-Pak S. |
| Part Number | IRF1407L Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤7.8mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust d.
*Static drain-source on-resistance: RDS(on) ≤7.8mΩ *Enhancement mode *Fast Switching Speed *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *reliable device for use in a wide variety of applications *ABSOLUTE MAXIMUM RATINGS(Ta=. |