| Part Number | IRF3709ZCS Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | PD - 95836 IRF3709ZCS IRF3709ZCL Applications l High Frequency Synchronous Buck Converters for Computer Processor Power HEXFET® Power MOSFET VDSS RDS(on) max 30V 6.3m: Qg 17nC Benefits l Low RDS(. Notes through are on page 11 1 1/16/04 IRF3709ZCS/L Static @ TJ = 25°C (unless otherwise specified) Parameter BVDSS ∆ΒVDSS/∆TJ RDS(on) VGS(th) ∆VGS(th)/∆TJ IDSS IGSS gfs Qg Qgs1 Qgs2 Qgd Qgodr Qsw Qoss td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Breakdo. |
IRF3709ZCS Datasheet and Specifications PDF
The IRF3709ZCS is a HEXFET Power MOSFET.
| Part Number | IRF3709ZCS Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview | ·Static drain-source on-resistance: RDS(on) ≤6.3mΩ@VGS= 10V ·Drain Source Voltage : VDSS= 30V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable oper. PE MAX UNIT V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 250µA 30 V VGS(th) Gate Threshold Voltage VDS= VGS; ID=250µA 1.35 2.25 V RDS(on) Drain-Source On-Resistance VGS= 10V; ID=21A 6.3 mΩ IGSS Gate-Body Leakage Current VGS= ±20V;VDS= 0 ±100 nA IDSS Zero Gate Voltage Drain C. |
| Part Number | IRF3709ZCS Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | VBsemi |
| Overview |
IRF3709ZCS-VB
IRF3709ZCS-VB Datasheet
N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) ()
30
0.0024 at VGS = 10 V
0.0027 at VGS = 4.5 V
ID (A)a, e 98 98
Qg (Typ) 8.
* TrenchFET® Power MOSFET * 100 % Rg and UIS Tested * Compliant to RoHS Directive 2011/65/EU APPLICATIONS * OR-ing * Server * DC/DC ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage Gate-Source Voltage VDS 30 V VGS ± 20 TC = 25. |