| Part Number | IRF624B Datasheet |
|---|---|
| Manufacturer | Fairchild Semiconductor |
| Overview |
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize o.
* * * * * * 4.1A, 250V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 13.5 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D G G DS TO-220 IRF Series GD S TO-220F IRFS Series S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv. |
IRF624B Datasheet and Specifications PDF
The IRF624B is a 250V N-Channel MOSFET.
| Part Number | IRF624B Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | VBsemi |
| Overview |
IRF624B-VB
IRF624B-VB Datasheet Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
250
VGS = 10 V
1.1
14
2.7
7.8
Single
FEATURES.
* Dynamic dV/dt Rating * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements * Compliant to RoHS Directive 2002/95/EC Available RoHS* COMPLIANT D TO-220AB S D G G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETE. |