| Part Number | IRF730 |
|---|---|
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package .
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Fast switching Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that . |
IRF730 Datasheet
The IRF730 is a Power MOSFET.
| Part Number | IRF730 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | STMicroelectronics |
| Overview |
c The PowerMESH™II is the evolution of the first u generation of MESH OVERLAY™. The layout d refinements introduced greatly improve the ro Ron*area figure of merit while keeping the device P at the le.
Type IRF730
VDSS 400V
RDS(on) <1Ω
ID 5.5A
* Exceptional dv/dt capability * 100% avalanche tested * Low gate charge t(s) Description c The PowerMESH™II is the evolution of the first u generation of MESH OVERLAY™. The layout d refinements introduced greatly improve the ro Ron*area figure of mer. |
| Part Number | IRF730 |
|---|---|
| Description | N-Channel Power MOSFET |
| Manufacturer | Intersil |
| Overview |
IRF730
Data Sheet July 1999 File Number
1580.5
5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET
This is an N-Channel enhancement mode silicon gate power field effect transistor. It is an advanced power M.
* 5.5A, 400V * rDS(ON) = 1.000Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info. |
| Part Number | IRF730 |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview | MOSFET IRF730 N-channel mosfet transistor INCHANGE Features With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A Absolute Maxi. With TO-220 package Simple drive requirements Fast switching V DSS=400V; RDS(ON)1.0 ;I 1.gate 2.drain 3.source D=5.5A Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNIT VDSS Drain-source voltage (VGS=0) 400 V VGS Gate-source voltage 20 ID Drain Current-continuous@ TC=25 5.5 . |