| Part Number | IRF840PbF Datasheet |
|---|---|
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package.
* Dynamic dV/dt rating * Repetitive avalanche rated Available * Fast switching Available * Ease of paralleling * Simple drive requirements * Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that. |
IRF840PbF Datasheet and Specifications PDF
The IRF840PbF is a Power MOSFET.
| Part Number | IRF840PBF Datasheet |
|---|---|
| Description | N-Channel Type Power MOSFET |
| Manufacturer | Thinki Semiconductor |
| Overview |
This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially design.
* RDS(on) (Max 0.85 Ω )@VGS=10V * Gate Charge (Typical 35nC) * Improved dv/dt Capability * High ruggedness * 100% Avalanche Tested 1. Gate { { 2. Drain * ◀▲ * * { 3. Source BVDSS = 500V RDS(ON) = 0.85 ohm ID = 8.8A General Description This N-channel enhancement mode field-effect power transistor. |
| Part Number | IRF840PBF Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | International Rectifier |
| Overview | only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such pr. 2.92 (.115) 2.64 (.104) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982. 3 OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information E XAMPL E : T HIS IS AN IR F 1010 LOT COD. |