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IRFD210 Datasheet

The IRFD210 is a N-Channel Power MOSFET. Download the datasheet PDF and view key features and specifications below.

Part NumberIRFD210
ManufacturerIntersil
Overview only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader i.
* 0.6A, 200V
* rDS(ON) = 1.500Ω
* Single Pulse Avalanche Energy Rated
* SOA is Power Dissipation Limited
* Nanosecond Switching Speeds
* Linear Transfer Characteristics
* High Input Impedance
* Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Info.
Part NumberIRFD210
DescriptionPower MOSFET
ManufacturerInternational Rectifier
Overview . .
Part NumberIRFD210
DescriptionFIELD EFFECT POWER TRANSISTOR
ManufacturerGE
Overview ~~D~[P~U FIELD EFFECT POWER TRANSISTOR IRFD21 0,211 D82BN2,M2 0.6 AMPERES 200, 150 VOLTS RDS(ON) = 1.5 il This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE's advanced Power DMOS te.
* Polysilicon gate - Improved stability and reliability
* No secondary breakdown - Excellent ruggedness
* Ultra-fast switching - Independent of temperature
* Voltage controlled - High transconductance
* Low input capacitance - Reduced drive requirement
* Excellent thermal stability - Ease of paralle.
Part NumberIRFD210
DescriptionPower MOSFET
ManufacturerVishay
Overview Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The 4 pin DIP package i.
* Dynamic dV/dt rating
* Repetitive avalanche rated
* For automatic insertion
* End stackable
* Fast switching
* Ease of paralleling
* Simple drive requirements
* Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation power MOSFETs fro.

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