| Part Number | IRFP260N |
|---|---|
| Manufacturer | International Rectifier |
| Overview | Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching spee. 5°C VGS EAS IAR EAR dv/dt TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recove. |
IRFP260N Datasheet
The IRFP260N is a Power MOSFET.
| Part Number | IRFP260N |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
IRFP260N，IIRFP260N
·FEATURES ·Static drain-source on-resistance:
RDS(on)≤40mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot var.
*Static drain-source on-resistance: RDS(on)≤40mΩ *Enhancement mode: *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Fast switching *Fully Avalanche Rated *ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain. |
| Part Number | IRFP260N |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview |
Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.
* Advanced Process Technology * Dynamic dv/dt Rating * 175°C Operating Temperature * Fast Switching * Fully Avalanche Rated * Ease of Paralleling * Simple Drive Requirements * Lead-Free TO-247AC Description Fifth Generation HEXFET Power MOSFETs utilizes advanced processing techniques to achieve e. |