| Part Number | IRFP2907PBF |
|---|---|
| Manufacturer | International Rectifier |
| Overview | This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET a. of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. G Absolute Maximum Ratings ID @ T. |
IRFP2907PBF Datasheet
The IRFP2907PBF is a Power MOSFET.
| Part Number | IRFP2907PBF |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Infineon |
| Overview |
This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are.
* Advanced Process Technology * Ultra Low On-Resistance * Dynamic dv/dt Rating * 175°C Operating Temperature * Fast Switching * Repetitive Avalanche Allowed up to Tjmax * Lead-Free Description This Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extr. |