| Part Number | IRFU214 Datasheet |
|---|---|
| Manufacturer | International Rectifier |
| Overview | . . |
IRFU214 Datasheet PDF
The IRFU214 is a Power MOSFET.
| Part Number | IRFU214 Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | Vishay |
| Overview |
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed fo.
* Dynamic dV/dt rating * Repetitive avalanche rated * Surface-mount (IRFR214, SiHFR214) * Straight lead (IRFU214, SiHFU214) * Available in tape and reel * Fast switching Available * Ease of paralleling * Material categorization: for definitions of compliance please see www.vishay.com/doc?9. |
| Part Number | IRFU214 Datasheet |
|---|---|
| Description | N-Channel Power MOSFETs |
| Manufacturer | Intersil |
| Overview |
only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sh.
* 2.2A, 250V * rDS(ON) = 2.000Ω * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * High Input Impedance * 150oC Operating Temperature * Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Ordering Informat. |
| Part Number | IRFU214 Datasheet |
|---|---|
| Description | N-Channel MOSFET |
| Manufacturer | Inchange Semiconductor |
| Overview |
iscN-Channel MOSFET Transistor
IRFU214
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤2.0Ω @VGS=10V ·Enhancement mode:
Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) ·100% avalanche tested ·Minimum .
*Low drain-source on-resistance: RDS(ON) ≤2.0Ω @VGS=10V *Enhancement mode: Vth = 2.0 to 4.0V (VDS = 10 V, ID=0.25mA) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation *DESCRITION *Switching Voltage Regulators *ABSOLUTE MAXIMUM RATINGS(Ta=25℃. |