IXTA1N100 Datasheet and Specifications PDF

Advanced Technical Information High Voltage MOSFET N-Channel Enhancement Mode Avalanche Energy Rated IXTA 1N100 IXTP 1N100 VDSS ID25 RDS(on) = 1000 V = 1.5 A = 11 Ω Symbol VDSS VDGR VGS VGSM ID25.

Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Ÿ International standard packages Ÿ High voltage, Low RDS (on) HDMOSTM process Ÿ Rugged polysilicon gate cell structure Ÿ Fast switching times Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise spe.

isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 11Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot varia.

*Static drain-source on-resistance: RDS(on) ≤ 11Ω@VGS=10V
*Fully characterized avalanche voltage and current
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device performance and reliable operation
*APPLICATION
*DC/DC Converter
*Switch-Mode and Resonant-Mode Power Supplies
*ABSOL.