| Part Number | MJE13003D Datasheet |
|---|---|
| Manufacturer | Dc Components |
| Overview | Designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. TO-126ML Pinning 1 = Base 2 = Collector 3 = Emitter .148(3.75) .138(3.50) .163(4.12) .153(3.87). C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCEV BVCEO ICEV IEBO VCE(sat)1 VCE(sat)2 VCE(sat)3 VBE(sat)1 VBE(sat)2 hFE1 hFE2 380µs, Duty Cycle 2% Min 700 400 8 5 Typ - Max 1 1 0.5 1 3 1 1.2 40 25 Unit V V mA mA V V V V. |
MJE13003D Datasheet and Specifications PDF
The MJE13003D is a TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR.
| Part Number | MJE13003D Datasheet |
|---|---|
| Description | HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR |
| Manufacturer | Unisonic Technologies |
| Overview |
The UTC MJE13003D is a NPN Power Transistor. It is intended to be used in applications requiring medium voltage capability and high switching speeds.
FEATURES
* Fast-Switching And High Voltage Capab.
* Fast-Switching And High Voltage Capability * Dynamic Parameters With Low Spread * High Reliability * Integrated Antiparallel Collector-Emitter Diode
* INTERNAL SCHEMATIC DIAGRAM * ORDERING INFORMATION Ordering Number Lead Free Halogen Free MJE13003DL-x-T60-K MJE13003DG-x-T60-K MJE13003DL-x-. |
| Part Number | MJE13003D Datasheet |
|---|---|
| Description | NPN Silicon Plastic-Encapsulate Transistor |
| Manufacturer | Micro Commercial Components |
| Overview |
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MJE13003D
Features
• Lead Free Finish/RoHS Co.
* Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) * Capable of 1.25Watts of Power Dissipation. * Collector-current 1.5A * Collector-base Voltage 700V * Operating and storage junction temperature range: -55OC to +150OC * Epoxy meets UL 94 V-0 . |