| Part Number | MJE702T Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview | ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = -80 V ·DC Current Gain— : hFE = 750(Min) @ IC= -1.5A = 100(Min) @ IC= -4A ·Complement to Type MJE802T ·Minimum Lot-to-Lot variations for robust devic. er Transistor INCHANGE Semiconductor MJE702T ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -1.5A; IB= -30mA VCE(sat)-2 Collector-Emitte. |
MJE702T Datasheet and Specifications PDF
The MJE702T is a PNP Transistor.
Key Specifications
| Max Operating Temp | 150 °C |
|---|
| Part Number | MJE702T Datasheet |
|---|---|
| Description | POWER TRANSISTOR |
| Manufacturer | Central Semiconductor |
| Overview | The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medium power complementary silicon Darlington transistors designed for audio amplifier applications as complementary output devices. MAR. BVCEO IC=50mA (MJE700T,701T,800T,801T) 60 VCE(SAT) IC=1.5A, IB=30mA (MJE700T,702T,800T,802T) VCE(SAT) IC=2.0A, IB=40mA (MJE701T,703T,801T,803T) VCE(SAT) IC=4.0A, IB=40mA VBE(ON) VCE=3.0V, IC=1.5A (MJE700T,702T,800T,802T) VBE(ON) VCE=3.0V, IC=2.0A (MJE701T,703T,801T,803T) VBE(ON) VCE=3.0V. |