PBSS5330PA Datasheet
PBSS5330PA Datasheet (NXP Semiconductors)
NXP Semiconductors
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN compl.
and benefits
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
* Exposed heat sink for excellent thermal and electrical conductivity
* Leadless small SMD plastic packa.
PBSS5330PA Datasheet (Nexperia)
Nexperia
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with medium power capability. NPN compl.
and benefits
* Low collector-emitter saturation voltage VCEsat
* High collector current capability IC and ICM
* Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
* Exposed heat sink for excellent thermal and electrical conductivity
* Leadless small SMD plastic packa.