| Part Number | PED2311DN Datasheet |
|---|---|
| Manufacturer | ChipSourceTek |
| Overview |
The PED2311DN uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected.
PED2311DN
General Features
● VD.
* VDS = 18V, ID = 12A RDS(ON) < 7.5mΩ @ VGS=4.5V Schematic diagram RDS(ON) < 8.6mΩ @ VGS=3.8V RDS(ON) < 10mΩ @ VGS=3.1V RDS(ON) < 11mΩ @ VGS=2.5V ESD Rating: 4000V HBM * High Power and current handing capability * Lead free product is acquired * Surface Mount Package k Application e * PWM app. |
PED2311DN Datasheet and Specifications PDF
The PED2311DN is a N-Channel Enhancement Mode Power MOSFET.
| Part Number | PED2311DN Datasheet |
|---|---|
| Description | N-Channel Enhancement Mode Power MOSFET |
| Manufacturer | semi one |
| Overview |
The PED2311DN uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM .
* VDS = 20V,ID =12 A RDS(ON) = 6.0mΩ@ VGS=4.5V RDS(ON) = 6.5mΩ@ VGS=4.2V RDS(ON) = 7.5mΩ@ VGS=3.8V RDS(ON) = 8.2mΩ@ VGS=2.5V ESD Rating: 2000V HBM * High Power and current handing capability * Lead free product is acquired * Surface Mount Package Schematic diagram G2 S2 S2 G1 S1 S1 DFN2x3-6L bottom. |