| Part Number | PZT3906 Datasheet |
|---|---|
| Manufacturer | onsemi |
| Overview | This device is designed for general-purpose amplifier and switching applications at collector currents of 10 mA to 100 mA. 2N3906 EBC TO-92 MMBT3906 C SOT-23 Mark:2A E B PZT3906 C SOT-223 E C. . |
PZT3906 Datasheet and Specifications PDF
The PZT3906 is a PNP General-Purpose Amplifier.
Key Specifications
| Package | SOT-223 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 4 |
| Max Frequency | 250 MHz |
| Height | 1.8 mm |
| Length | 6.7 mm |
| Width | 3.7 mm |
| Max Operating Temp | 150 °C |
| Part Number | PZT3906 Datasheet |
|---|---|
| Description | PNP Transistors |
| Manufacturer | Kexin Semiconductor |
| Overview |
SMD Type
Transistors
PNP Transistors PZT3906 (KZT3906)
■ Features
● Low Voltage and Low Current ● General Purpose Amplifier and Switch Application ● Complementary to PZT3904
SOT-223
6.50±0.2 3.00.
* Low Voltage and Low Current * General Purpose Amplifier and Switch Application * Complementary to PZT3904 SOT-223 6.50±0.2 3.00±0.1 4 7.0±0.3 3.50±0.2 123 10 Unit:mm 1.80 (max) 0.02 ~ 0.1 2.30 (typ) 4.60 (typ) 0.70±0.1 0.250 Gauge Plane 1.Base 2.Collector 3.Emitter 4.Collector * Absolu. |
| Part Number | PZT3906 Datasheet |
|---|---|
| Description | SMALL SIGNAL PNP TRANSISTOR |
| Manufacturer | STMicroelectronics |
| Overview | ® PZT3906 SMALL SIGNAL PNP TRANSISTOR PRELIMINARY DATA Type PZT3906 s Marking 3906 s s s SILICON EPITAXIAL PLANAR PNP TRANSISTOR SOT-223 PLASTIC PACKAGE FOR SURFACE MOUNTING CIRCUITS TAPE AND RE. l I CEX I BEX Parameter Collector Cut-off Current (V BE = 3 V) Collector Cut-off Current (V BE = 3 V) Test Conditions V CE = -30 V V CE = -30 V I C = -1 mA -40 Min. Typ. Max. -50 -50 Unit nA nA V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage (I B = 0) V (BR)CBO Collector-Base Breakdown Voltage (I. |
| Part Number | PZT3906 Datasheet |
|---|---|
| Description | PNP Silicon Switching Transistor |
| Manufacturer | Siemens Semiconductor Group |
| Overview | PNP Silicon Switching Transistor High DC current gain 0.1 mA to 100 mA q Low collector-emitter saturation voltage q Complementary type: PZT 3904 (NPN) q PZT 3906 Type PZT 3906 Marking ZT 3906 Orde. C = 1 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IB = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector-base cutoff current VCB = 30 V, IE = 0 Collector-emitter cutoff current VCE = 30 V, + VBE = 0.5 V Collector-base cutoff current VCE = 30 V, + VBE = 0.5 V DC current gain1). |