| Part Number | R6509ENJ Datasheet |
|---|---|
| Manufacturer | Inchange Semiconductor |
| Overview |
·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage
650
V
VGS
Gate-Source.
*Drain Current *ID= 9A@ TC=25℃ *Drain Source Voltage- : VDSS=650V(Min) *Static Drain-Source On-Resistance : RDS(on) = 585mΩ(Max) *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *Designed for use in switch mode power supplies and. |
R6509ENJ Datasheet and Specifications PDF
The R6509ENJ is a N-Channel MOSFET.
Key Specifications
| Mount Type | Surface Mount |
|---|
| Part Number | R6509ENJ Datasheet |
|---|---|
| Description | Power MOSFET |
| Manufacturer | ROHM |
| Overview | R6509ENJ Nch 650V 9A Power MOSFET VDSS RDS(on)(Max.) ID PD 650V 0.585Ω ±9A 94W lFeatures 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant . 1) Low on-resistance 2) Fast switching speed 3) Parallel use is easy 4) Pb-free plating ; RoHS compliant lOutline LPT(S) lInner circuit Datasheet lApplication Switching lPackaging specifications Packing Embossed Tape Packing code TL Marking R6509ENJ Basic ordering unit. |