The RD10ES is a ZENER DIODES.
EIC Semiconductor
TH97/10561QM TW00/17276EM IATF 0060636 SGS TH07/1033 RD2.0ES SERIES ZENER DIODES VZ : 2.0 - 37.5Volts PD : 400 mW FEATURES : * High reliability * Low leakage current * Suitable for 5mm - pitch hi.
: * High reliability * Low leakage current * Suitable for 5mm - pitch high speed automatical insertion * Pb / RoHS Free MECHANICAL DATA Case: DO-34 Glass Case Weight: approx. 0.093g DO - 34 Glass 0.078 (2.0 )max. Cathode Mark 0.017 (0.43)max. 1.00 (25.4) min. 0.118 (3.0) max. 1.00 (25.4) min. Di.
NEC
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34 Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode) construction having allowable power dissipation of 400 mW. PACKAG.
* DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch (5 mm)
5 mm Cathode indication 25 MIN.
φ 2.0 MAX.
25 MIN.
* Planar process
* DHD (Double Heatsink Diode) construction
* VZ Applied E24 standard
ORDERING INFORMATION
RD2.0ES to RD39ES with suffix "AB1", "A.
WEJ
RD2.0ES~RD39ES Zener diode Features 1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch(5mm) 2. Planar process 3. Vz applied E24 standard Applications Circui.
1. DO-34 Glass sealed package This diode can be inserted into a PC board with a shorter pitch(5mm) 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Forward C.
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|---|---|---|
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| RD1004LS-SB5 | SANYO | Ultrahigh-Speed Switching Diode |
| RD10E | NEC | 500 mW DHD ZENER DIODE DO-35 |
| RD10E | EIC Semiconductor | SILICON ZENER DIODES |
| RD10EB | SEMTECH | ZENER DIODES |
| RD1006LS | SANYO | Ultrahigh-Speed Switching Diode |
| RD100HHF1C | Mitsubishi Electric | Silicon RF Power MOS FET |