The RD10F is a ZENER DIODES.
| Max Operating Temp | 150 °C |
|---|
EIC Semiconductor
RD2.0F ~ RD82F VZ : 2.0 - 82 Volts PD : 1 Watt FEATURES : * Complete 2.0 to 82 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Cas.
: * Complete 2.0 to 82 Volts * High peak reverse power dissipation * High reliability * Low leakage current * Pb / RoHS Free MECHANICAL DATA Case: DO-41 Glass Case Weight: approx. 0.35g MAXIMUM RATINGS Rating at 25 °C ambient temperature unless otherwise specified Rating Power Dissipation , See Fig..
NEC
NEC type RD∗∗F Series are DHD (Double Heatsink Diode) Construction planar type zener diodes possessing an allowable power dissipation of 1 watt. PACKAGE DIMENSIONS (Unit: mm) φ 0.8 FEATURES • DHD (D.
* DHD (Double Heatsink Diode) Construction
* Planar process
* VZ: Applied E24 standard
* DO-41 Glass sealed package
φ 3.0 MAX.
Circuits for, Constant Voltage, Constant Current, Wave form clipper, Surge absorber, etc.
MAXIMUM RATINGS (TA = 25°C)
Power Dissipation (P) Forward Current (IF) Junction T.
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|---|---|---|---|
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|---|---|---|
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| RD1004LS-SB5 | SANYO | Ultrahigh-Speed Switching Diode |
| RD10E | NEC | 500 mW DHD ZENER DIODE DO-35 |
| RD10E | EIC Semiconductor | SILICON ZENER DIODES |
| RD10EB | SEMTECH | ZENER DIODES |
| RD1006LS | SANYO | Ultrahigh-Speed Switching Diode |
| RD100HHF1C | Mitsubishi Electric | Silicon RF Power MOS FET |