STW26NM60N Datasheet
STW26NM60N Datasheet (Inchange Semiconductor)
Inchange Semiconductor
·Low Drain-Source On-Resistance APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Cont.
*Drain Current
*ID=20A@ TC=25℃
*Drain Source Voltage-
: VDSS= 600V(Min)
*Static Drain-Source On-Resistance
: RDS(on) = 165mΩ(Max)
*100% avalanche tested
*Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION
*Low Drain-Source On-Resistance
APPLICATIONS
*Swi.
STW26NM60N Datasheet (STMicroelectronics)
STMicroelectronics
These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET applies a new vertical structure to the company’s strip layout to.
Type STB26NM60N STF26NM60N STI26NM60N STP26NM60N STW26NM60N
*
*
*
TAB
TAB
VDSS 600 V 600 V 600 V 600 V 600 V
RDS(on) max < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω < 0.165 Ω
ID
3
20 A 20 A 20 A 20 A 20 A
TAB
1
2
3 12
3 1 2
TO-220FP
I²PAK
TO-220
100% avalanche tested Low input capacitance .